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THE EFFECT OF NICKEL IMPURITY ON OPTICAL PROPERTIES OF CHEMICALLY DEPOSITED CADMIUM OXIDE THIN FILM

 

ABSTRACT

During the several decades, CdO thin film has attracted many attentions as a candidate for the transparent conducting electrodes due to its high electrical conductivity and high optical transmittance. A series of CdO thin films have been prepared by spray pyrolytic technique at different substrate temperatures. X-ray diffraction scans confirmed the polycrystalline structure of the films. The films exhibit preferential orientation along the plane. To describe the preferential orientation, the texture coefficient has been calculated and the standard deviation factor has also been evaluated to explain the growth mechanism. Various structural parameters such as lattice parameter, crystallite size, strain, dislocation density and stacking fault probability have been calculated. From the optical measurements, the void concentration has been determined and the results are discussed.

 

TABLE OF CONTENT
TITLE PAGE
APPROVAL PAGE
DEDICATION
ACKNOWLEDGEMENT
ABSTRACT
TABLE OF CONTENT
CHAPTER ONE
1.0      INTRODUCTION
1.1      OBJECTIVE OF THE STUDY
1.3      SCOPE OF THE STUDY

CHAPTER TWO
2.0      LITERATURE REVIEW
2.1     REVIEW OF CADMIUM OXIDE (CDO) THIN FILM
2.2      PREPARATION TECHNIQUES OF CDO THIN FILMS
2.3      VAPOUR PHASE TECHNIQUES
2.4      VARIOUS PROPERTIES OF CADMIUM OXIDE
2.5      APPLICATIONS

CHAPTER THREE
3.0     METHODOLOGY
3.1     EXPERIMENT

CHAPTER FOUR
4.0      RESULT ANALYSIS
4.1      STRUCTURE PROPERTIES
4.1.1 Effect of film thickness
4.1.2. Effect of substrate temperature
4.2.         OPTICAL PROPERTIES
4.2.1. Effect of substrate temperature
4.2.2. Effect of spray time
4.3.     ELECTRICAL PROPERTIES

CHAPTER FIVE
5.1      CONCLUSION
5.2      BIBLIOGRAPHY

 

CHAPTER ONE

1.0                                               INTRODUCTION

Recently transparent conducting oxide (TCO) thin films such as tin oxide indium tin oxide and cadmium oxide have attracted considerable attention because of their simultaneously high transparency in the visible spectrum and low resistivity. The majority of known TCO materials are n-type semiconductors where defects such as oxygen vacancies, impurity substitutions and interstitials donate electrons to the conduction band providing charge carriers for the flow of electric current. The increasing use of transparent conductors in various opto-electronic devices, heterojunction solar cells and heat mirror prompted interest in electro-optical applications of thin films. CdO is a degenerate semiconductor with wide bandgap that varies from 2.2 to 2.9 eV with increasing carrier density. It shows high n-type conductivity due to the presence of interstitial Cd atoms and oxygen vacancies which both act as donors. It has been prepared using various techniques such as sputtering sol–gel evaporation, pulsed laser deposition chemical vapour deposition and spray pyrolysis. CdO thin film has been prepared using spray pyrolysis technique. Spray pyrolysis method is an effective production leads to short production time, homogeneous particle composition, and one step production method. The main preparation conditions are the nature of the precursor and solvents which influence film properties profoundly. The present paper reports preparation, investigations and characterization of cadmium oxide thin films deposited by spray pyrolysis technique at various substrate (deposition) temperatures and spray time.

1.2                                                      OBJECTIVE OF THE STUDY
The objective of this work is to determine the effect of nickel impurity when deposited to Cadmium oxide (CdO) thin films.

1.3                                                      SCOPE OF THE STUDY
CdO thin films were deposited on glass and silicon substrates by simple perfume atomizer at 350°C using cadmium acetate and trisodium citrate (TSC). The effect of the TSC concentration on the structural, morphological, optical, and photoconductive properties of the prepared CdO thin films was investigated. Optical transmittance study of the films showed high transmittance (50% to 60%), and the absorption edge was found to shift towards the red region depending on the TSC concentration. The films exhibited a direct band-to-band transition with bandgap varying between 2.31 eV and 2.12 eV.

 

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