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TITLE PAGE
A STUDY INTO THE ENERGY GAP OF A SEMICONDUCTOR
BY
---
--/H2013/01430
DEPARTMENT OF ----
SCHOOL OF ---
INSTITUTE OF ---
DECEMBER,2018
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DEDICATION
This project is dedicated to Almighty God for his protection, kindness, strength over my life throughout the period and also to my --- for his financial support and moral care towards me.Also to my mentor --- for her academic advice she often gives to me. May Almighty God shield them from the peril of this world and bless their entire endeavour Amen.
ACKNOWLEDGEMENT
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Inside a semiconductor, in order for the electrons to transition from the valence band to the conduction band, those electrons must be able to overcome an energy barrier called the energy gap or the band gap. Determine the energy gap of a certain semiconductor, assuming that the electric conductivity of the semiconductor only increase when it is heated.
An experiment on how to find the energy gap of the semiconductor was carried out using isothermal heating method using semiconducting diode with heating on temperature 40°C, 60°C, 80°C and 100°C gradually which can be used in educational process.
TABLE OF CONTENTS
COVER PAGE
TITLE PAGE
APPROVAL PAGE
DEDICATION
ACKNOWELDGEMENT
ABSTRACT
CHAPTER ONE
INTRODUCTION
1.1 BACKGROUND OF THE PROJECT
- PROJECT OBJECTIVES
- SCOPE OF THE PROJECT
- SIGNIFICANCE OF THE STUDY
- APPLICATION OF SEMICONDUCTOR
- ADVANTAGES OF SEMICONDUCTOR DEVICES
- DISADVANTAGES OF SEMICONDUCTOR DEVICES
CHAPTER TWO
LITERATURE REVIEW
- OVERVIEW OF SEMICONDUCTOR
- SEMICONDUCTOR DEVICE MATERIALS
- PROPERTIES OF SEMICONDUCTOR
- SEMICONDUCTOR MATERIALS
- PREPARATION OF SEMICONDUCTOR MATERIALS
- HISTORICAL BACKGROUND OF SEMICONDUCTORS
CHAPTER THREE
INTRODUCTION
- INTRODUCTION
- THEORETICAL PART
- EXPERIMENT OF THE STUDY
CHAPTER FOUR
4.1 RESULT AND DISCUSSION
CHAPTER FIVE
- CONCLUSION
- REFERENCES
CHAPTER ONE
1.0 INTRODUCTION
1.1 BACKGROUND OF THE STUDY
Semiconductors are defined by their unique electric conductive behavior, somewhere between that of a conductor and an insulator. The differences between these materials can be understood in terms of the quantum states for electrons, each of which may contain zero or one electron. These states are associated with the electronic band structure of the material. Electrical conductivity arises due to the presence of electrons in states that are delocalized, however in order to transport electrons a state must be partially filled, containing an electron only part of the time. If the state is always occupied with an electron, then it is inert, blocking the passage of other electrons via that state. The energies of these quantum states are critical, since a state is partially filled only if its energy is near the Fermi level
High conductivity in a material comes from it having many partially filled states and much state delocalization. Metals are good electrical conductors and have many partially filled states with energies near their Fermi level. Insulators, by contrast, have few partially filled states, their Fermi levels sit within band gaps with few energy states to occupy. Importantly, an insulator can be made to conduct by increasing its temperature: heating provides energy to promote some electrons across the band gap, inducing partially filled states in both the band of states beneath the band gap (valence band) and the band of states above the band gap (conduction band). An intrinsic semiconductor has a band gap that is smaller than that of an insulator and at room temperature significant numbers of electrons can be excited to cross the band gap.
A pure semiconductor, however, is not very useful, as it is neither a very good insulator nor a very good conductor. However, one important feature of semiconductors is that their conductivity can be increased and controlled by doping with impurities and gating with electric fields. Doping and gating move either the conduction or valence band much closer to the Fermi level, and greatly increase the number of partially filled states.
Some wider-band gap semiconductor materials are sometimes referred to as semi-insulators. When undoped, these have electrical conductivity nearer to that of electrical insulators, however they can be doped (making them as useful as semiconductors). Semi-insulators find niche applications in micro-electronics, such as substrates for HEMT. An example of a common semi-insulator is gallium arsenide. Some materials, such as titanium dioxide, can even be used as insulating materials for some applications, while being treated as wide-gap semiconductors for other applications.
In solid-state physics, an energy gap, is an energy range in a solid where no electronic states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy difference (in electron volts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote a valence electron bound to an atom to become a conduction electron, which is free to move within the crystal lattice and serve as a charge carrier to conduct electric current. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move in the solid; however, if some electrons transfer from the valence to the conduction band, then current can flow. Therefore, the band gap is a major factor determining the electrical conductivity of a solid. Substances with large band gaps are generally insulators, those with smaller band gaps are semiconductors, while conductors either have very small band gaps or none, because the valence and conduction bands overlap.
The aim of this study is to determine the Energy Band Gap of a Semiconductor by using germanium diode
1.2 AIM AND OBJECTIVE OF THE STUDY
The main aim of this work is to study the energy gap of a semiconductor. At the end of this study the following objectives shall be achieved:
- Energy gap of different semiconductors shall be known.
- The description of Conductors, Insulators and Semiconductors shall also be known.
- Lastly, an experiment was performed with regard to the study.
1.3 SCOPE OF THE STUDY
Every solid has its own characteristic energy-band structure. This variation in band structure is responsible for the wide range of electrical characteristics observed in various materials. In semiconductors and insulators, electrons are confined to a number of bands of energy, and forbidden from other regions. The term "band gap" refers to the energy difference between the top of the valence band and the bottom of the conduction band. Electrons are able to jump from one band to another. However, in order for an electron to jump from a valence band to a conduction band, it requires a specific minimum amount of energy for the transition. The required energy differs with different materials. Electrons can gain enough energy to jump to the conduction band by absorbing either a phonon (heat) or a photon (light).
1.4 SIGNIFICANCE OF THE STUDY
Energy band gap differentiates the metals into conductor, insulator, semiconductor. Energy band gap is usually referred to the energy difference between the conduction band and the valence band.
This study has made us to understand the energy which required for the promotion of a valence electron that bound to an atom whichbecome a "conduction electron", that is free for moving within the "crystal lattice" and it also serves as the "charge carrier" to the conduct of electric current.
1.5 APPLICATION OF SEMICONDUCTOR
Semiconductors are employed in the manufacture of various kinds of electronic devices, including diodes, transistors, and integrated circuits. Such devices have found wide application because of their compactness, reliability, power efficiency, and low cost.
1.6 ADVANTAGES OF SEMICONDUCTOR DEVICES
- As semiconductor devices have no filaments, hence no power is needed to heat them to cause the emission of electrons.
- Since no heating is required, semiconductor devices are set into operation as soon as the circuit is switched on.
- During operation, semiconductor devices do not produce any humming noise.
- Semiconductor devices require low voltage operation as compared to vacuum tubes.
- Owing to their small sizes, the circuits involving semiconductor devices are very compact.
- Semiconductor devices are shock proof.
- Semiconductor devices are cheaper as compared to vacuum tubes.
- Semiconductor devices have an almost unlimited life.
- As no vacuum has to be created in semiconductor devices, they have no vacuum deterioration trouble.
1.7 DISADVANTAGES OF SEMICONDUCTOR DEVICES
- The noise level is higher in semiconductor devices as compared to that in the vacuum tubes.
- Ordinary semiconductor devices cannot handle as more power as ordinary vacuum tubes can do.
CHAPTER TWO: The chapter one of this work has been displayed above. The complete chapter two of "a study into the energy gap of a semiconductor" is also available. Order full work to download. Chapter two of "a study into the energy gap of a semiconductor" consists of the literature review. In this chapter all the related work on "a study into the energy gap of a semiconductor" was reviewed.
CHAPTER THREE: The complete chapter three of "a study into the energy gap of a semiconductor" is available. Order full work to download. Chapter three of "a study into the energy gap of a semiconductor" consists of the methodology. In this chapter all the method used in carrying out this work was discussed.
CHAPTER FOUR: The complete chapter four of "a study into the energy gap of a semiconductor" is available. Order full work to download. Chapter four of "a study into the energy gap of a semiconductor" consists of all the test conducted during the work and the result gotten after the whole work
CHAPTER FIVE: The complete chapter five of "a study into the energy gap of a semiconductor" is available. Order full work to download. Chapter five of "a study into the energy gap of a semiconductor" consist of conclusion, recommendation and references.
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